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  mga-634p8 ultra low noise, high linearity low noise amplifi er data sheet attention: observe precautions for handling electrostatic sensitive devices. esd machine model = 70 v (class a) esd human body model = 500 v (class 1b) refer to avago application note a004r: electrostatic discharge, damage and control. description avago technologies mga-634p8 is an economical, easy- to-use gaas mmic low noise amplifi er (lna). the lna has low noise and high linearity achieved through the use of avago technologies proprietary 0.25um gaas enhancement-mode phemt process. it is housed in a miniature 2.0 x 2.0 x 0.75mm 3 8-pin quad-flat-non-lead (qfn) package. it is designed for optimum use from 1.5 ghz up to 2.3 ghz. the compact footprint and low profi le coupled with low noise, high gain and high linearity make the mga-634p8 an ideal choice as a low noise amplifi er for cellular infrastructure for gsm and cdma. for optimum performance at lower frequency from 450mhz up to 1.5ghz, mga-633p8 is recommended. for optimum per- formance at higher frequency from 2.3ghz up to 4ghz, mga-635p8 is recommended. all these 3 products, mga- 633p8, mga-634p8 and mga-635p8 share the same package and pinout confi guration. pin confi guration and package marking 2.0 x 2.0 x 0.75 mm 3 8-lead qfn features ?? ultra low noise figure ?? high linearity performance ?? gaas e-phemt technology [1] ?? low cost small package size: 2.0x2.0x0.75 mm 3 ?? excellent uniformity in product specifi cations ?? tape-and-reel packaging option available specifi cations 1.9 ghz; 5v, 48ma ?? 17.4 db gain ?? 0.44 db noise figure ?? 15.5 db input return loss ?? 36 dbm output ip3 ?? 21 dbm output power at 1db gain compression applications ?? low noise amplifi er for cellular infrastructure for gsm tds-cdma, and cdma. ?? other ultra low noise application. simplifi ed schematic pin 1 C vbias pin 5 C not used pin 2 C rfinput pin 6 C not used pin 3 C not used pin 7 C rfoutput/vdd pin 4 C not used pin 8 C not used centre tab - ground notes: ?? the schematic is shown with the assumption that similar pcb is used for all mga-633p8, mga-634p8 and mga-635p8. ?? detail of the components needed for this product is shown in table 1. ?? enhancement mode technology employs positive gate voltage, thereby eliminating the need of negative gate voltage associated with conventional depletion mode devices. ? good rf practice requires all unused pins to be earthed. top view bottom view [2] [1] [3] [4] [7] [8] [6] [5] 34x [2] [1] [3] [4] [7] [8] [6] [5] l1 l2 c3 c1 c2 c4 r2 rfin rfout vdd [2] [1] [3] [4] [7] [8] [6] [5] c6 rbias r1 bias c5 note: package marking provides orientation and identifi cation 34 = device code, where x is the month code.
2 absolute maximum rating [1] t a =25c symbol parameter units absolute maximum v dd device voltage, rf output to ground v 5.5 v bias gate voltage v 0.7 p in,max cw rf input power (v dd = 5.0v, i d = 50 ma) dbm +20 p diss total power dissipation [2] w 0.5 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance thermal resistance [3] (v dd = 5.0v, i dd = 50ma) ? jc = 62c/w notes: 1. operation of this device in excess of any of these limits may cause permanent damage. 2. power dissipation with device turned on. board temperature t b is 25c. derate at 16mw/c for t b >119c. 3. thermal resistance measured using infra-red measurement technique electrical specifi cations [1], [4] rf performance at t a = 25c, v dd = 5v, r bias = 5.6 kohm, 1.9 ghz, measured on demo board in figure 1 with component listed in table 1 for 1.9 ghz matching. symbol parameter and test condition units min. typ. max. i dd drain current ma 37 48 61 gain gain db 16.1 17.4 19.1 oip3 [2] output third order intercept point dbm 33 36 nf [3] noise figure db 0.44 0.69 op1db output power at 1db gain compression dbm 21 irl input return loss, 50 ? source db 15.5 orl output return loss, 50 ? load db 13 rev isol reverse isolation db 30 notes: 1. measurements at 1.9 ghz obtained using demo board described in figure 1. 2. oip3 test condition: f rf1 = 1.9 ghz, f rf2 = 1.901 ghz with input power of -10dbm per tone. 3. for nf data, board losses of the input have not been de-embedded. 4. use proper bias, heatsink and derating to ensure maximum device temperature is not exceeded. see absolute maximum ratings an d application note for more details.
3 product consistency distribution charts [1, 2] figure 1. idd @ 1.9ghz, 5v, 48ma mean = 48 f igure 2. noise figure @1.9ghz, 5v, 48ma mean = 0.44 figure 3. oip3 @ 1.9ghz, 5v, 48ma mean = 36 figure 4. gain @1.9ghz, 5v, 48ma mean = 17.4 notes: 1. distribution data samples are 500 samples taken from 3 diff erent wafers. future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 2. circuit losses have not been de-embedded from the actual measurements. lsl usl 36 38 40 42 44 46 48 50 52 54 56 58 60 62 lsl 33 34 35 36 37 usl 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 lsl usl 16 16.5 17 17.5 18 18.5 19 idd max: 61 min: 37 mean: 48 noise figure max: 0.69 mean: 0.44 oip3 min: 33 mean: 36 gain max: 19.1 min: 16.1 mean: 17.4
4 demo board layout figure 5. demo board layout diagram C recommended pcb material is 10 mils rogers ro4350. C suggested component values may vary according to layout and pcb material. demo board schematic figure 6. demo board schematic diagram l1 (8.2nh) l2 (8.2nh) c3 (10pf) c1 (1000pf) c2 (1000pf) c4 (10pf) r2 (0 ohm) rfin vdd [2] [1] [3] [4] [7] [8] [6] [5] c6 (4.7uf) rbias (5.6kohm) r1 (49.9 ohm) bias c5 (4.7uf) table 1. component list for 1.9 ghz matching part size value detail part number c1, c2 0402 1000pf (murata) grm155r71h102ka01e l1 0402 8.2nh (coilcraft) 0402cs-8n2xglu l2 0402 8.2nh (toko) llp1005-fh8n2c c3, c4 0402 10pf (murata) grm1555c1h100jz01e c5, c6 0805 4.7uf (murata) grm21br60j475ka11l r1 0402 49.9 ohm (rohm) mcr01 mzs f 49r9 r2 0402 0 ohm (kamaya) rmc1/16s-jpth rbias 0402 5.6 kohm (rohm) mcr01 mzs j 562 note: c1, c2 are dc blocking capacitors l1 input match for nf l2 output match for oip3 c3, c4, c5, c6 are bypass capacitors r1 is stabilizing resistor rbias is the biasing resistor
5 mga-634p8 typical performance rf performance at t a = 25c, vdd = 5v, id = 50ma, measured using 50ohm input and output board, unless otherwise stated. oip3 test condition: f rf1 = 1.9 ghz, f rf2 = 1.901 ghz with input power of -10dbm per tone. figure 7. fmin vs idd at 5v at 1.9ghz. figure 8. fmin vs idd at 5v at 2ghz. figure 9. gain vs idd at 5v tuned for optimum oip3 and fmin at 1.9ghz. figure 10. gain vs idd at 5v tuned for optimum oip3 and f min at 2ghz. figure 11. oip3 vs idd at 5v tuned for optimum oip3 and fmin at 1.9ghz. figure 12. oip3 vs idd at 5v tuned for optimum oip3 and fmin at 2ghz. 0.3 0.32 0.34 0.36 0.38 0.4 0.42 0.44 40 50 55 70 80 idd (ma) fmin (db) 0.3 0.32 0.34 0.36 0.38 0.4 0.42 0.44 0.46 0.48 0.5 40 50 55 70 80 idd (ma) fmin (db) 0 2 4 6 8 10 12 14 16 18 20 40 50 55 70 80 idd(ma) gain(db) 0 2 4 6 8 10 12 14 16 18 20 40 50 55 70 80 idd(ma) gain(db) 0 5 10 15 20 25 30 35 40 45 40 50 55 70 80 idd(ma) oip3(dbm) 0 5 10 15 20 25 30 35 40 45 40 50 55 70 80 idd(ma) oip3(dbm)
6 figure 13. op1db vs idd at 5v tuned for optimum oip3 and fmin at 1.9ghz figure 14. op1db vs idd at 5v tuned for optimum oip3 and fmin at 2ghz. figure 15. fmin vs frequency and idd at 5v figure 16. oip3 vs frequency and temperature for optimum oip3 and fmin at 5v 50ma figure 17. gain vs frequency and temperature for optimum oip3 and fmin at 5v 50ma figure 18. fmin vs frequency and temperature for optimum oip3 and fmin at 5v 50ma 0 2 4 6 8 10 12 14 16 18 20 22 24 40 50 55 70 80 idd (ma) op1db (dbm) 0 2 4 6 8 10 12 14 16 18 20 22 1.5 1.9 2 2.2 2.5 frequency (ghz) gain (db) 0 2 4 6 8 10 12 14 16 18 20 22 24 40 50 55 70 80 idd (ma) op1db (dbm) 25c 85c -40c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.5 1.9 2.0 2.2 2.5 frequency (ghz) fmin (db) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.5 1.9 2.0 2.2 2.5 frequency (ghz) fmin (db) 25c 85c -40c 40ma 50ma 80ma 0 5 10 15 20 25 30 35 40 45 1.5 1.9 2 2.2 2.5 frequency (ghz) oip3(dbm) 25c 85c -40c
7 figure 19. op1db vs frequency and temperature for optimum oip3 and fmin at 5v 50ma 0 2 4 6 8 10 12 14 16 18 20 22 24 1.5 1.9 2 2.2 2.5 frequency (ghz) op1db(dbm) 25c 85c -40c below is the table showing the mga-634p8 refl ection coeffi cient parameters tuned for maximum oip3, vdd = 5v, idd = 50ma frequency (ghz) gamma load position oip3 (dbm) op1db (dbm) magnitude angle 1.5 0.42 20 41.13 21.26 1.9 0.28 30 41.8 21.19 2 0.28 30 41.56 20.89 2.2 0.42 40.1 41.95 21.36 2.5 0.57 57.6 42.24 19.65 [2] [1] [3] [4] [7] [8] [6] [5] bias rfinput reference plane rfoutput reference plane figure 20 notes: 1. the maximum oip3 values are calculated based on load pull measurements on approximately 136 diff erent impedances using focus load pull test system. 2. measurements are conducted on 0.010 inch think roger 4350. the input reference plane is at the end of the rfin pin and the output reference plane is at the end of the rfout pin as shown in figure 20. 3. gamma load for maximum oip3 with biasing of 5v 40ma, 5v 50ma, 5v 70ma and 5v 80ma from 1.5ghz to 2.5ghz are available upon request.
8 mga-634p8 typical performance in demoboard rf performance at t a = 25c, vdd = 5v, rbias = 5.6 kohm, measured on demo board in figure. 5 with component list in table 1 for 1.9 ghz matching, unless or otherwise stated. figure 21. nf vs frequency vs temperature figure 22. gain vs frequency vs temperature figure 23. oip3 vs frequency vs temperature figure 24. op1db vs frequency vs temperature figure 25. s-parameter performance with dut on demoboard shown in figure 1. figure 26. k-factor vs frequency vs temperature 0 5 10 15 20 25 1.5 2 2.5 3 3.5 4 frequency (mhz) gain (db) -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 4 frequency (ghz) irl, orl, gain, rev iso (db) irl gain rev iso orl 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 2 4 6 8 101214161820 frequency (ghz) k-factor 25c -40c 85c 25c -40c 85c 26 28 30 32 34 36 38 40 42 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) oip3 (dbm) 18 18.5 19 19.5 20 20.5 21 21.5 22 22.5 23 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) op1db (dbm) 25c -40c 85c 25c -40c 85c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 frequency (ghz) nf (db) 25c 85c -40c
9 figure 27. idd vs rbias figure 28. gain vs frequency vs idd figure 29. nf vs frequency vs idd figure 30. op1db vs frequency vs idd figure 31. oip3 vs frequency vs idd 30 35 40 45 50 55 60 65 70 34567 rbias (k ) idd (ma) 0 5 10 15 20 25 1.5 2 2.5 3 3.5 4 frequency (ghz) gain (db) 56ma 46ma 76ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 frequency (ghz) nf (db) 18 18.5 19 19.5 20 20.5 21 21.5 22 22.5 23 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) op1db (dbm) 26 28 30 32 34 36 38 40 42 1.5 1.7 1.9 2.1 2.3 2.5 frequency (ghz) oip3 (dbm) 47ma 40ma 56ma 47ma 40ma 56ma 47ma 40ma 56ma
10 mga-634p8 typical scattering parameters, vdd = 5v, idd = 50ma freq ghz s11 s21 s12 s22 mag. ang. db mag. ang. mag. ang. mag. ang. 0.10 0.23 -163.34 8.19 2.57 -125.30 0.00 97.65 0.94 160.95 0.50 0.48 136.70 14.45 5.28 171.68 0.00 79.05 0.72 85.19 0.90 0.37 37.53 21.26 11.56 113.46 0.01 84.82 0.45 1.93 1.00 0.27 9.09 21.61 12.04 88.15 0.01 66.43 0.36 -25.00 1.50 0.09 -176.43 19.22 9.14 18.04 0.03 7.89 0.21 -60.82 1.90 0.15 115.81 17.45 7.46 -34.36 0.03 -34.00 0.20 -142.05 2.00 0.16 104.04 16.94 7.03 -47.24 0.03 -43.61 0.21 -158.67 2.50 0.21 62.05 14.92 5.57 -98.96 0.04 -84.48 0.25 141.36 3.00 0.24 24.06 13.16 4.55 -149.45 0.04 -124.96 0.29 89.94 4.00 0.28 -49.44 10.50 3.35 116.58 0.06 158.36 0.33 -3.50 5.00 0.29 -130.59 8.39 2.63 23.57 0.07 80.99 0.35 -103.34 6.00 0.32 142.80 6.26 2.06 -69.38 0.08 2.65 0.40 155.89 7.00 0.41 59.02 4.36 1.65 -162.15 0.09 -76.09 0.45 64.58 8.00 0.61 -25.71 2.84 1.39 83.27 0.12 -177.50 0.20 -45.85 9.00 0.55 -99.89 -12.65 0.23 40.36 0.03 146.66 0.60 -19.43 10.00 0.64 -158.49 -7.75 0.41 -26.75 0.07 92.57 0.69 -105.31 11.00 0.67 143.37 -8.52 0.38 -104.19 0.09 25.31 0.74 -173.97 12.00 0.62 84.82 -8.10 0.39 174.66 0.12 -48.61 0.76 113.83 13.00 0.40 10.64 -7.36 0.43 74.90 0.18 -140.59 0.61 25.16 14.00 0.17 168.38 -10.64 0.29 -46.45 0.14 97.06 0.25 -116.58 15.00 0.20 114.45 -18.47 0.12 -121.86 0.10 56.12 0.22 117.87 16.00 0.62 53.59 -21.00 0.09 151.34 0.08 -60.50 0.51 83.13 17.00 0.74 3.66 -24.22 0.06 84.71 0.04 -159.91 0.59 31.81 18.00 0.73 -35.67 -26.17 0.05 5.69 0.01 145.48 0.69 -11.95 19.00 0.69 -73.02 -28.94 0.04 -56.84 0.02 92.22 0.66 -58.62 20.00 0.61 -109.61 -34.21 0.02 -123.92 0.04 31.07 0.50 -104.19 [2] [1] [3] [4] [7] [8] [6] [5] bias rfinput reference plane rfoutput reference plane figure 32.
11 typical noise parameters, vdd = 5v, idd = 50ma freq ghz fmin db ? opt mag. ? opt ang. r n/50 ? 1.5 0.36 0.138 68.4 0.0484 1.9 0.42 0.191 113.6 0.0442 2 0.47 0.177 120.4 0.0526 2.2 0.57 0.173 131.1 0.0444 2.5 0.67 0.188 151.5 0.0476 notes: 1. the fmin values are based on noise fi gure measurements at 100 diff erent impedances using focus source pull test system. from these measurements a true fmin is calculated. 2. scattering and noise parameters are measured on coplanar waveguide made on 0.010 inch thick roger 4350. the input reference plane is at the end of the rfinput pin and the output reference plane is at the end of the rfoutput pin as shown in fi gure 32. 3. s2p fi le with scattering and noise parameters for biasing 5v 40ma, 5v 50ma, 5v 70ma and 5v 80ma are available upon request. part number ordering information part number no. of devices container mga-634p8-blkg 100 antistatic bag MGA-634P8-TR1G 3000 7 inch reel slp2x2 package p i n 1 d o t b y mar ki ng 2.00 0.050 2.00 0.050 34 x 0.203 ref. 0.000 C 0.05 0.75 0.05 0.60 0.050 ex p. d ap 0.35 0.050 0.25 0.050 1 .20 0.050 ex p. d ap 1 .50 ref. 0.50 bsc p i n #1 ide n tifi ca ti on r0. 1 00 no t es: 1 . a ll dime n sio n s are i n mi ll ime t ers. 2. d ime n sio n s are i n c lu si v e of p l a t i n g. 3. d ime n sio n s are e x c lu si v e of mo l d fl as h a n d me t a l b u rr. t op v iew bo tt om v iew side v iew
12 recommended pcb land pattern and stencil design 0.50 r0. 1 5 0. 1 7 0.50 1 .50 0.2 1 1 .75 0.56 me t a l s u rface so l dermas k ope n 0.50 0.25 r0. 1 5 0.45 0.30 0.50 1 .20 1 .50 0.50 0.05 ( a ll sm gaps ) 2.20 1 .75 0.00 0.80 0.50 0.22 0.40 0. 1 70 0.48 0.2 1 1 .50 1 .72 2. 1 6 1 .75 0.56 no t e: 1 . recomme n ded l a n d pa tt er n a n d s t e n ci l ope n i n g 2. s t e n ci l th ic kn ess is 0. 1 mm ( 4 mi l s ) 3. a ll dime n sio n are i n mm unl ess o th erwise speci fi ed l a n d pa tt er n s t e n ci l ope n i n g combi n a t io n of l a n d pa tt er n a n d s t e n ci l ope n i n g
13 tape dimensions 10 max ++ 10 max a o b o t 1 t t k o d 1 f e p 2 p o p d w d escription symbol size (mm) size (inches) length wi d th d epth pitch bottom hole d iameter a 0 b 0 k 0 p d 1 2.30 0.05 2.30 0.05 1.00 0.05 4.00 0.10 1.00 + 0.25 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 cavity d iameter pitch position d p 0 e 1.50 0.10 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation wi d th thickness w t 1 8.00 0.30 8.00 0.10 0.254 0.02 0.315 0.012 0.315 0.004 0.0100 0.0008 carrier tape cavity to perforation (wi d th d irection) cavity to perforation (length d irection) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 d istance wi d th tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.0004 cover tape device orientation user fee d d irection cover tape carrier tape reel 8 mm 4 mm 34x 34x 34x 34x
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies in the united states and other countries. data subject to change. copyright ? 2005-2012 avago technologies. all rights reserved. av02-2544en - may 25, 2012 reel dimensions C 7 inch ps 6 ps 6 bac k view ? 55.0 0.5 6.25mm e mboss ed lette rs lette r i ng thi c k n e ss: 1 .6mm s ee det a il "x" s l o t h o le " b " s l o t h o le( 2 x) 1 80 apar t . s l o t h o le " a " : 3.0 0.5mm (1x) s l o t h o le " b " : 2.5 0.5mm (1x) ?1 3.0 65 45 r 1 0.65 60 r5.2 e mboss ed r i bs ra i s ed : 0.25mm, width : 1 .25mm 1 4.4 * ma x . ? 5 1 .2 0.3 r e c y c le l ogo f ron t view 1 20 1 .5 m i n. ? 20.2 m i n. - 0.2 + 0.5 det a il "x" det a il "y" ( s l o t h o l e ) 3.5 1 .0 s ee det a il "y" f ron t bac k f ron t bac k s l o t h o le " a " ?1 78.0 0.5 s l o t h o le a s l o t h o le b - 0.0 +1 .5 * 8.4 7.9 - 1 0.9 ** ?1 78.0 1 .0


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